11 results
Photoemission and Cathodoluminescence of Doped Lithium Tetraborate Crystals Being Developed for Neutron Detection
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1341 / 2011
- Published online by Cambridge University Press:
- 12 July 2011, mrss11-1341-u07-10
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- 2011
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Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-30
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- 2006
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Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF24-01
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- 2005
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Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E3.19
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- 2004
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Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.35
- Print publication:
- 2004
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Photoluminescence Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.21
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- 2004
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Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior
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- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.37
- Print publication:
- 2003
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Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.5
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- 2001
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Neodymium and Erbium Implanted Gan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 422 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 69
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- 1996
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Annealing Study of Ion Implanted MOCVD and MBE Grown GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 813
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- 1995
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Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 301 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 251
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- 1993
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